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Basic electronics
C20-E3/EV
Details
Haynes-Shockley experiment
F-HS/EV
Details
Semiconductor materials: measurement of energy gap
F-SEG/EV
Details
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Showing all 4 results
F-RTD/EV
The system, as shown schematically at the side, consists of two distinct units: a cryostat made from a dewar vessel holding 3 samples joined to a […]
C20-E3/EV
Testing Module mod. C20-E3/EV is the ideal support for developing the tests of Basic Electronics Laboratory. It enables to carry out a wide range of exper. […]
F-HS/EV
The experiment of Haynes-Shockley it allows to measure the drift mobility of electrons and holes in semiconductors. It is an experiment with great educational value, because […]
F-SEG/EV
This experiment evaluates the Energy gap of a semiconductor material (Ge and Si) at room temperature, producing electronhole pairs by means of the internal photoelectric effect.